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Cited article:

Intermediate Resistance and Capacitance States in Ge‐Rich GeSbTe Phase‐Change Memory

Adrien Delpoux, Sijia Ran, Laura Pecourt, Roberto Simola, Daniel Benoit, Simon Jeannot, Alain Claverie and Jérémie Grisolia
physica status solidi (RRL) – Rapid Research Letters 20 (4) (2026)
https://doi.org/10.1002/pssr.202500422